IXXN200N60C3H1 Transistor SOT-227B fast recovery Schottky diode MOSFET

IXXN200N60C3H1 Transistor SOT-227B fast recovery Schottky diode MOSFET

Sale price  $23.00 Regular price  $40.00
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IXXN200N60C3H1 Transistor SOT-227B fast recovery Schottky diode MOSFET

IXXN200N60C3H1 Transistor SOT-227B fast recovery Schottky diode MOSFET

Sale price  $23.00 Regular price  $40.00 Unit price $23.00 each
High-performance MOSFET transistor designed for fast switching applications. The IXXN200N60C3H1 features integrated Schottky diode technology for rapid recovery and reduced switching losses. SOT-227B package provides excellent thermal management and compact form factor suitable for power conversion circuits, industrial drives, and renewable energy systems. Rated for 600V operation with optimized gate charge characteristics. Ideal for applications requiring high efficiency and reliable performance in demanding electrical environments.

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