EBG HXP/4 2/4R7 J IXGN200N170 IXFN180N07 IXTN8N150L IXTN100N20L2 IXGN200N60A2 Transistor, Thyristor, SOT-227B Schottky, Fast Recovery Diode, MOSFET
EBG HXP/4 2/4R7 J
Sale price
$32.00
Regular price
$70.00
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High-performance semiconductor component featuring integrated transistor, thyristor, and Schottky diode technology in SOT-227B package. Combines fast recovery diode and MOSFET functionality for efficient power switching applications. Designed for industrial and automotive circuits requiring reliable high-speed switching with minimal power loss. Suitable for power conversion, motor control, and energy management systems. Delivers superior thermal performance and extended operational lifespan in demanding environments.
EBG HXP/4 2/4R7 J IXGN200N170 IXFN180N07 IXTN8N150L IXTN100N20L2 IXGN200N60A2 Transistor, Thyristor, SOT-227B Schottky, Fast Recovery Diode, MOSFET
Sale price
$32.00
Regular price
$70.00
Unit price
$32.00 each